| 二维层状α-In2Se3(2H)铁电材料的各向异性光响应 |
| Anisotropic photoresponse of two-dimensional layered α-In2Se3(2H) ferroelectric materials |
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| 摘要: 采用机械剥离法制备了 2H相 α-In2Se3[α-In2Se3(2H)]纳米片。通过 X射线衍射(X-ray diffraction，XRD)、拉曼光谱、球差电镜和压电力显微镜对纳米片的结构和铁电性能进行详细表征，确定纳米片为具有特殊结构的 α-In2Se3(2H)铁电材料。进一步在SiO2/Si基片上成功构造了基于α-In2Se3(2H)铁电的平面四端器件，详细研究其在各个方向的光响应。结果表明，具有本征结构的 α-In2Se3(2H)在相互垂直方向均没有光响应。在器件两端分别施加电压后，α-In2Se3(2H)器件在相互垂直方向均出现了明显的光响应，尤其在接近于易极化轴方向施加电压后，α-In2Se3(2H)器件出现了各向异性光响应。 |
| 关键词: 二维层状α-In2Se3(2H) 机械剥离法 铁电性 各向异性光响应 |
| 基金项目: 国家自然科学基金(No.52002232)、山西省高校科技创新项目(No.2022L477)、运城学院博士科研启动项目(No.YQ-2023024)和先进永磁材料与技术省部共建协同创新中心2022年度规划课题(No.2022-06)资助。 |
| Abstract: The mechanical stripping method prepared the 2H-phase α-In2Se3 (α-In2Se3(2H)) nanosheets. The structure and ferroelectric properties of the nanosheets were characterized by X-ray diffraction (XRD), Raman spectroscopy, spherical aberration electron microscopy, and piezoelectric force microscopy. The nanosheets were identified as α-In2Se3(2H) ferroelectric materials with a special structure. Further, a planar four-terminal device based on α-In2Se3 (2H) ferroelectricity was successfully constructed on the SiO2/Si substrate, and its photoresponse in all directions was investigated in detail. The results show that α-In2Se3(2H) with intrinsic structure has no photoresponse in both mutually perpendicular directions. After applying voltages at each end of the device, the α-In2Se3(2H) device shows obvious photoresponse in the mutually perpendicular directions. In particular, after utilizing a point voltage close to the direction of the easy polarization axis, the α-In2Se3(2H) device shows an anisotropic photoresponse. |
| Keywords: two-dimensional layered α-In2Se3(2H) mechanical stripping method ferroelectricity anisotropic photoresponse |
| 投稿时间：2024-04-02 修订日期：2024-07-16 |
| 摘要点击次数: 837 |
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| 吕宝华,李玉珍.二维层状α-In2Se3(2H)铁电材料的各向异性光响应[J].无机化学学报,2024,40(10):1911-1918. |
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