Cu2+离子A位取代对MgTiO3陶瓷结构及介电性能的影响
Effect of Cu2+ Ion A-Site Substitution on Structure and Dielectric Properties of MgTiO3 Ceramics
作者单位E-mail
杨习志 成都理工大学机电工程学院, 成都 610059  
杨帆 成都理工大学机电工程学院, 成都 610059  
赖元明 成都理工大学机电工程学院, 成都 610059 laiyuanming19@cdut.edu.cn 
李宝阳 成都理工大学机电工程学院, 成都 610059  
王凡硕 成都理工大学机电工程学院, 成都 610059  
苏桦 电子科技大学, 电子薄膜与集成器件国家重点实验室, 成都 610054  
摘要: 采用固相反应制备了Mg1-xCuxTiO3(0.00≤x≤0.20)微波介电陶瓷,研究CuO烧结助剂对MgTiO3陶瓷的微观结构和微波介电性能的影响。实验结果表明,CuO中的Cu2+离子会进入到MgTiO3晶格中并取代Mg2+,形成Mg1-xCuxTiO3固溶体。由于液相效应,适量的CuO可以促进MgTiO3陶瓷的致密化烧结,降低其烧结温度。Cu2+离子的A位取代会改变样品的TiO6八面体扭曲度。随着Cu2+离子含量的增加,会使MgTiO3陶瓷的结构稳定性降低。随着CuO含量的增加,晶粒的不均匀生长和液相的出现导致样品的品质因数(Qf)下降。同时,Mg1-xCuxTiO3陶瓷的相对密度、结构稳定性和平均共价度的降低也会恶化陶瓷的Qf值。样品的介电常数(εr)与离子极化率、杂相和TiO6八面体扭曲度相关。样品的谐振频率温度系数(τf)随TiO6八面体扭曲度的增加而减小。当x=0.08时,样品可在1 150℃实现致密化烧结,且τf值改善至-3.4×10-5-1
关键词: 微波介电陶瓷  结构  介电性能
基金项目: 稀贵金属综合利用新技术国家重点实验室开放课题(No.SKL-SPM-202021)和成都理工大学科研启动基金(No.KYQD2019_07728)资助。
Abstract: Mg1-xCuxTiO3 (0.00 ≤ x ≤ 0.20) microwave ceramics were prepared by the solid-state reaction method. The effects of CuO sintering aids on the microstructure and microwave dielectric properties of MgTiO3 ceramics were investigated. It was shown that the Cu2+ ions could enter the MgTiO3 lattice and substitute Mg2+ ions forming Mg1-xCuxTiO3 solid solution. A moderate amount of CuO can promote the densification sintering of MgTiO3 ceramics and reduce the sintering temperature due to the liquid phase. The A-site substitution of Cu2+ ions alters the distortion of the TiO6 octahedra. With the increase of Cu2+ ions content in MgTiO3 ceramics, the structural stability was weakened. With the addition of CuO content, the quality factor (Qf) of the sample decreased owing to inhomogeneous grain growth and the appearance of the liquid phase. Meanwhile, the reduction of relative density, structural stability, and average covalency of Mg1-xCuxTiO3 ceramics would deteriorate the Qf value of the sample. The dielectric constants (εr) of samples were related to the ionic polarizability, impurity phase, and TiO6 octahedra distortion. The temperature coefficients of resonant frequency (τf) decreased with the increase of TiO6 octahedra distortion. When x= 0.08, the sample could achieve densification sintering at 1 150 ℃ and the τf value was improved to -3.4×10-5-1.
Keywords: microwave dielectric ceramic  structure  dielectric properties
投稿时间:2021-10-12 修订日期:2022-02-10
摘要点击次数:  1732
全文下载次数:  820
杨习志,杨帆,赖元明,李宝阳,王凡硕,苏桦.Cu2+离子A位取代对MgTiO3陶瓷结构及介电性能的影响[J].无机化学学报,2022,38(4):599-610.
查看全文  查看/发表评论  下载PDF阅读器
Support information: 相关附件:   file支持信息