| 溶胶凝胶法制备TiO2@Cf柔性忆阻器交叉开关 |
| Preparation of TiO2@Cf Flexible Memristor Crossbars via Sol-Gel Method |
| 作者 | 单位 | E-mail | | 陈晓平 | 中南大学航天航空学院, 长沙 410083
新型特种纤维及其复合材料湖南省重点实验室, 长沙 410083 | | | 胡思闽 | 中南大学航天航空学院, 长沙 410083
新型特种纤维及其复合材料湖南省重点实验室, 长沙 410083 | | | 胡海龙 | 中南大学航天航空学院, 长沙 410083
空天智能热结构研究中心, 长沙 410083 | | | 岳建岭 | 中南大学航天航空学院, 长沙 410083
新型特种纤维及其复合材料湖南省重点实验室, 长沙 410083 | jlyue2010@csu.deu.cn | | 匡振杰 | 中南大学航天航空学院, 长沙 410083
新型特种纤维及其复合材料湖南省重点实验室, 长沙 410083 | | | 黄小忠 | 中南大学航天航空学院, 长沙 410083
新型特种纤维及其复合材料湖南省重点实验室, 长沙 410083 | |
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| 摘要: 以碳纤维作为柔性衬底和电极材料，通过溶胶凝胶法在其表面镀覆TiO2阻变活性层，进而通过“十”字搭接制备成柔性纤维忆阻器（TiO2@Cf）。采用X射线衍射、扫描电子显微镜、X射线光电子能谱等测试手段对TiO2@Cf结构进行表征并对其忆阻特性及阻变机理进行研究。结果表明：碳纤维上的TiO2涂层为锐钛矿型晶体结构，其氧空位的浓度约为19.5%；制备的TiO 2@Cf柔性忆阻器为突变型忆阻器，其高低阻态阻值开关比可达104；经过疲劳耐受性测试，忆阻器件的高低阻态开关比稳定在2个数量级左右。TiO2@Cf忆阻器的机理表现为：在高阻态和低阻态时是以欧姆导电为主导的载流子输运机制，其阻态转变机制与氧空位导电细丝的形成和断裂有关。制备的TiO2@Cf柔性忆阻器在一定程度上具有柔性弯曲变形，同时满足可编织、穿戴等功能。 |
| 关键词: 溶胶凝胶法 晶体生长 碳纤维 忆阻器交叉开关 氧空位 柔性设备 |
| 基金项目: 国家自然科学基金（No.51775560）和中南大学授予特别副教授的初始研究经费（No.202045002）资助项目。 |
| Abstract: Carbon fiber was used as the flexible substrate and electrode material, and the TiO2 resistive active layer was plated by the sol-gel method, and then the flexible fiber memristor (TiO2@Cf) was prepared by the“ten”overlapping. The structure was characterized by X-ray diffraction, scanning electron microscope and X-ray photoelectron spectroscopy and memristance characteristic and resistance change mechanism were studied. The results show that the TiO2 coating on the carbon fiber has an anatase crystal structure, and the concentration of oxygen vacancies was about 19.5%. The prepared TiO2@Cf flexible memristor was a mutant memristor and it has a high-low resistance state switch ratio up to 104. When performing the fatigue resistance test, the high-low resistance state switch ratio of the memristive device is stable at about two orders of magnitude. For both high resistance state and low resistance state, the carrier transport mechanism is dominated by ohmic conduction, where the resistance state transition is related to the formation and breakage of oxygen vacant conductive filaments. This memristor can sustain flexible bending deformation to a certain extent, either knitting or wearing. |
| Keywords: sol-gel processes crystal growth carbon fibers memristor crossbars oxygen vacancies flexible devices |
| 投稿时间：2020-05-20 修订日期：2020-09-18 |
| 摘要点击次数: 2050 |
| 全文下载次数: 1568 |
| 陈晓平,胡思闽,胡海龙,岳建岭,匡振杰,黄小忠.溶胶凝胶法制备TiO2@Cf柔性忆阻器交叉开关[J].无机化学学报,2020,36(12):2281-2288. |
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