| CuInS2量子点阻变效应 |
| Resistance Switching Effect of CuInS2 Quantum Dots |
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| 摘要: 采用改进的热分解法制备了具有半导体效应的CuInS2量子点，量子点尺寸均匀、大小为4.2 nm。组装的Au/CuInS2/FTO阻变存储器件表现出典型的双极性阻变特点，其开态电压为-3.8 V，关态电压为4 V，ON/OFF开关比约为103。对器件的I-V特性曲线线性拟合发现，器件的阻变机制在高阻态时表现为空间限制电荷（SCLC）传导机制，在低阻态时表现为欧姆传导机制。器件的阻变特性主要是由于电荷被CuInS2薄膜中的缺陷产生的势阱捕获导致。通过调节陷阱势垒高度引起电荷在陷阱中移动，导致导电通路的产生和断裂，使器件处于高阻态和低阻态。 |
| 关键词: 量子点 半导体 阻变开关 SCLC传导机制 陷阱势垒高度 |
| 基金项目: 国家自然科学基金（No.51572205）和教育部装备预研联合基金（No.6141A02022262）资助项目。 |
| Abstract: CuInS2 quantum dots with semiconductor effect were prepared by improved thermal decomposition method, and the uniform size of quantum dots was 4.2 nm. The Au/CuInS2/FTO device exhibited typical bipolar resistance characteristics, with an ON/OFF switching ratio of about 103, an ON voltage of -3.8 V and an OFF voltage of 4 V. The resistance mechanism of the device was studied by linear fitting the I-V characteristic curve of the device. The device has space-limiter charge (SCLC) conduction mechanism in high resistance state and ohmic conduction mechanism in low resistance state. The resistance characteristic of the device is mainly caused by the charge being trapped by the potential well generated by the defect in the CuInS2 film. The charge is moved in the trap by adjusting the height of the trap barrier, which results in the generation and fracture of the conductive path, so that the device is in a high resistance state and a low resistance state. |
| Keywords: quantum dots semiconductor resistance switching SCLC conduction mechanism trap barrier height |
| 投稿时间：2020-04-23 修订日期：2020-08-21 |
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| 邵雅洁,沈杰,龚少康,陈文,周静.CuInS2量子点阻变效应[J].无机化学学报,2020,36(11):2093-2099. |
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