| Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷结构和介电性能的影响 |
| Influence of Bi2O3 on the Structure and Dielectric Properties of Ag(Nb0.8Ta0.2)O3 Ceramics |
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| 摘要: 本文研究了Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷的结构和介电性能的影响。X射线衍射(XRD)结果表明，Bi2O3的掺杂可以使陶瓷中Ag+被还原并析出，且银析出的量随Bi2O3掺杂量的增加而不断增加，这可能源自于Bi3+对Ag+的取代。在一定范围内增大Bi2O3掺杂量可提高Ag(Nb0.8Ta0.2)O3陶瓷的室温介电常数，降低介电损耗，并使温度系数向负值方向移动。当Bi2O3的掺杂量约为3.5wt%时，样品具有较大的介电常数(ε=672)和较小的介电损耗(tanδ=7.3×10-4)。 |
| 关键词: ANT Bi2O3 掺杂 Ag析出 高介电常数 |
| 基金项目: |
| Abstract: The effect of Bi2O3 doping on the structure and dielectric properties of Ag(Nb0.8Ta0.2)O3 ceramics was investigated in this paper. The results of X-ray diffraction (XRD) showed that the doping of Bi2O3 could tend to accelerate the reduction of Ag, which may originate from the substitution of Bi3+ for Ag+. A certain doping amount of Bi2O3 would result in the increase of dielectric constant, and the decrease of dielectric loss of Ag(Nb0.8Ta0.2)O3 ceramics at room temperature, and making temperature coefficient shift for negative direction. The reason for the improvement of dielectric properties was also discussed. When the amount of Bi2O3 was about 3.5wt%, the sample had the best dielectric properties, larger permittivity (ε=672) and smaller dielectric loss (tanδ=7.3×10-4). |
| Keywords: ANT Bi2O3 doping Ag precipitation high dielectric constant |
| 投稿时间：2013-07-03 修订日期：2013-09-26 |
| 摘要点击次数: 1809 |
| 全文下载次数: 1961 |
| 肖谧,杨朝,钟小蓉,席芳芳.Bi2O3掺杂对Ag(Nb0.8Ta0.2)O3陶瓷结构和介电性能的影响[J].无机化学学报,2014,30(3):649-653. |
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