| 熔盐电解SiO2/C直接制备SiC纳米线 |
| Preparation of SiC Nanowires by Direct Electro-reduction of SiO2/C Pellets in Molten Salt |
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| 摘要: 采用纳米SiO2和酚醛树脂为原料制备酚醛树脂裂解碳纳米SiO2复合阴极(硅碳物质的量的比为1∶1)，直接电解PFC/SiO2复合阴极，在900 ℃熔融盐CaCl2中，恒槽压2.0 V下电解，制备出碳化硅纳米线。采用场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)及其附带的能谱仪、X射线分析衍射仪(XRD)和拉曼光谱(Raman)对产物的组成、形貌、微观结构等进行了表征。结果表明：碳化硅纳米线呈立方晶体结构，其直径为4~13 nm，长可达数微米；室温下该纳米线在415 nm和534 nm附近有宽的发光峰。最后，讨论了碳化硅纳米线的生成机制。 |
| 关键词: SiC纳米线 电解还原 二氧化硅 酚醛树脂 |
| 基金项目: 国家863计划（No.2012AA110102）国家自然科学基金（No.51004016）资助项目。 |
| Abstract: Silicon carbide nanowires were synthesized by mixing formaldehyde resin carbon and nanometer silicon dioxide (atomic Si/C ratio, 1∶1) under cell voltage of 2.0 V in molten CaCl2 at 900 ℃. The morphology, structure and chemical composition of the samples prepared by electro-reduction method were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electronic microscope (TEM), High-resolution transmission electron microscopy (HRTEM) coupled with electron energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and laser Raman spectroscopy. The results reveal that silicon carbide nanowires are crystalline with a cube structure, the diameter is distributed from 4 nm to 13 nm and the length is generally several micrometers. Two broad photoluminescence (PL) peaks at the center wavelength of about 415 nm and 534 nm were observed at room temperature. The formation mechanism of the SiC nanowires is also discussed. |
| Keywords: silicon carbide nanowires electroreduction silicon dioxide formaldehyde resin photoluminescence |
| 投稿时间：2013-04-23 修订日期：2013-07-15 |
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| 赵春荣,杨娟玉,卢世刚.熔盐电解SiO2/C直接制备SiC纳米线[J].无机化学学报,2013,29(12):2543-2548. |
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