无机化学学报

微波水热辅助电沉积法制备Bi₂S₃薄膜

Preparation of Bi₂S₃ Thin Films by Microwave-Hydrothermal Assisted Electrodeposition Method

作者	单位
王　艳	教育部轻化工助剂化学与技术重点实验室陕西科技大学，西安 710021
黄剑锋	教育部轻化工助剂化学与技术重点实验室陕西科技大学，西安 710021 深圳大学深圳市特种功能材料重点实验室，深圳 518060
朱　辉	教育部轻化工助剂化学与技术重点实验室陕西科技大学，西安 710021
曹丽云	教育部轻化工助剂化学与技术重点实验室陕西科技大学，西安 710021
薛小霜	教育部轻化工助剂化学与技术重点实验室陕西科技大学，西安 710021
曾燮榕	深圳大学深圳市特种功能材料重点实验室，深圳 518060

摘要: 采用微波水热辅助电沉积法在ITO导电玻璃表面制备了形貌均匀具有纳米棒、纳米板状结构的Bi₂S₃薄膜。利用XRD、XPS、场发射扫描显微镜(FESEM)、TEM和UV-Vis-Near IR对薄膜的结构、形貌、光学性能进行了表征。结果显示微波水热辅助电沉积法制备的Bi₂S₃薄膜具有良好的结晶性能；随着微波水热温度的提高，所制备Bi₂S₃薄膜的结晶性能先增强后降低，合适的温度是130 ℃。与电沉积法制得薄膜相比，采用微波水热辅助电沉积法制得Bi₂S₃薄膜的禁带宽度由1.44 eV增加到1.84 eV。

关键词: Bi₂S₃ 薄膜电沉积微波水热

基金项目:

Abstract: Uniform nanorod and nanoplate structured Bi₂S₃ thin films were prepared on ITO substrates using a microwave-hydrothermal assisted electrodeposition method. The phase compositions, morphologies and optical properties of the as-deposited thin films were characterized by XRD, XPS, Field emission scanning electron microscope(FESEM), TEM and UV-Vis-Near-IR. Results show that the obtained thin films are composed of orthorhombic phase Bi₂S₃ with good crystallinity. With the increase in the hydrothermal temperature, the crystallinity of the obtained films gradually improves then decreases. The best hydrothermal temperature is 130 ℃. Compared with the band gap for Bi₂S₃ thin film by electrodeposition method, the band gap of the Bi₂S₃ thin film obtained from microwave-hydrothermal assisted electrodeposition method raises from 1.44 to 1.84 eV.

Keywords: Bi₂S₃ thin films electrodeposition microwave-hydrothermal

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王　艳,黄剑锋,朱　辉,曹丽云,薛小霜,曾燮榕.微波水热辅助电沉积法制备Bi₂S₃薄膜[J].无机化学学报,2010,26(6):977-981.

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