| Eu3+、Ga3+共掺杂SiO2基质材料的制备及其发光性质 |
| Preparation and Luminescence Properties of Eu3+ Ion and Ga3+ Ion Co-doped SiO2 Materials |
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| 摘要: 通过溶胶-凝胶方法制备了稀土离子Eu3+和Ga3+共掺杂的SiO2材料；利用IR、XRD等研究了材料的结构，结果表明材料属于非晶态，800 ℃退火后样品的主要结构仍为SiO2的网状结构。400 ℃退火的样品在393 nm激发下发射光谱显示了Eu3+的特征发射光谱，产生3条明显谱带，分别是576 nm(5D0-7F |
| 关键词: 溶胶-凝胶方法 Eu3+和Ga3+共掺杂SiO2发光材料 发光性质 |
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| Abstract: Ga3+ and Eu3+ co-doped SiO2 materials were prepared by sol-gel method and the structure of materials were investigated by IR and XRD techniques. The results indicate that the materials are in amorphous phase and the SiO2 net structure is still observed in samples annealed at 800 ℃. The sample showed the characteristic emission of Eu3+ at 576 nm(5D0-7F0), 588 nm(5D0-7F1), 612 nm(5D0-7F2) when excited by 393 nm. And it is found that emission from 5D0-7F1 quenches with high temperature. The SiO2 materials doped with Ga3+ radiate blue fluo-rescence at 460 nm. Ga3+ and Eu3+ co-doped SiO2 materials can radiate blue and red fluorescence. Phosphor can be made to radiate different color fluorescence by varying excitation wavelength. Doping Ga3+ or Eu3+ has less influence on the emission wavelength of SiO2 materials, but has a great effect on the emission intensity. |
| Keywords: sol-gel method Ga3+ and Eu3+ co-doped SiO2 materials luminescence properties |
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| 王喜贵,于振友,娜米拉,薄素玲.Eu3+、Ga3+共掺杂SiO2基质材料的制备及其发光性质[J].无机化学学报,2008,24(4):571-575. |
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