| SiO2/Zn1-xMgxO复合半导体颗粒的制备及其光谱特性 |
| Preparation and Spectroscopy Characterization of SiO2/Zn1-xMgxO Semiconductor Composite Particles |
|
| 摘要: 利用异相成核种子生长法,采用锌镁盐浸渍和800 ℃固态烧结两处理步骤,在亚微米级的单分散SiO2球上沉积Zn1-xMgxO。通过 XRD、TEM和SEM表征，SiO2表面具有一层约17 nm厚的Zn1-xMgxO壳层，EDX证明其组成为Si、O、Mg、Zn，同SiO2 / ZnO比较，UV-Vis测试发现其具有更好的紫外吸收性能，红外谱图显示SiO2表面的硅羟基被SiO2和Zn1-xMgxO之间的界面键取代，在波长290 nm的紫外光激发下出现了398 nm紫色荧光峰和468 nm及451 nm 2个较强的蓝色荧光峰。 |
| 关键词: 掺镁氧化锌 单分散二氧化硅 半导体颗粒 光谱特性 |
| 基金项目: |
| Abstract: A new method is reported for the preparation of Zn1-xMgxO semiconductor nanoparticles on submicro-sized
SiO2 by the transfer of the Zn(Ac)2·2H2O and
Mg(Ac)2·4H2O ethanol mixed solution phase to monodisperse
SiO2 core substrate and further 800 ℃ thermal treatment. The Zn1-xMgxO shell sizes on monodispersed
SiO2 core were estimated to be 17 nm by XRD, TEM and SEM. EDX showed the presence of Zn, Mg, O, and Si elements. UV-Vis spectra indicated that
SiO2 / Zn1-xMgxO sample had a slight blue shift of the band gap and a higher UV absorption value than
SiO2 / ZnO sample. Infrared spectroscopy illustrated the formation of interfacial bond between
SiO2 and Zn1-xMgxO, that replaced surface silanol groups of
SiO2. The photoluminescence spectrum of SiO2 /Zn1-xMgxO sample excited at 290 nm showed a strong ultraviolet emission at 398 nm， and two strong blue luminescence peaks centered at about 451 nm and 468 nm. |
| Keywords: Mg-doping ZnO monodisperse SiO2 semiconductor particles spectroscopy characterization |
| |
| 摘要点击次数: 1239 |
| 全文下载次数: 1517 |
| 陈渊,冯华君,唐芳琼,任俊.SiO2/Zn1-xMgxO复合半导体颗粒的制备及其光谱特性[J].无机化学学报,2006,22(2):233-232. |
| 查看全文 查看/发表评论 下载PDF阅读器 |
| Support information: |
|
|
|
|
|
|
