| n型Bi2Te3-ySey温差电材料薄膜的电化学制备及表征 |
| Electrochemical Preparation and Characterization of n-Bi2Te3-ySey Thermoelectric Thin Films |
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| 摘要: 采用电化学控电位的方法在不锈钢基片上电沉积制备了Bi2Te3-ySey温差电材料薄膜。研究了电沉积溶液中硒含量与薄膜中硒含量的关系，考察了不同沉积电位对电沉积Bi2Te3-ySey薄膜的温差电性能的影响，并采用ESEM、EDS、XRD等方法对电沉积薄膜的形貌、成分及结构进行了分析。结果表明，在含有Bi3+、HTeO2+和Se4+的电沉积溶液中，采用电化学沉积的方法，可实现铋、碲、硒三元共沉积，生成Bi2Te3-ySey半导体化合物。改变电沉积溶液组成，可控制Bi2Te3-ySey化合物中硒的掺杂浓度。-0.04 V沉积电位下制备的Bi2Te3-ySey薄膜较平整、致密，组成为Bi2Te2.7Se0.3。退火处理可提高电沉积Bi2Te3-ySey薄膜的塞贝克系数，且控制沉积电位为-0.04 V下制备的Bi2Te3-ySey薄膜退火后的塞贝克系数为-123 μV·K-1。 |
| 关键词: Bi2Te3-ySey化合物 电沉积 温差电材料薄膜 |
| 基金项目: |
| Abstract: Bi2Te3-ySey thermoelectric films were prepared by potentiostatic electrodeposition on stainless steel substrates. Relationship between Se content in the electrodepositing solution and in the film was studied. The effect of electrodepositing potential on the performance of
Bi2Te3-ySey films was also investigated. The morphology, composition and structure of the films were characterized by ESEM, EDS and XRD. These results indicate that bismuth, tellurium and selenium could be co-deposited to form
Bi2Te3-ySey semiconductor compound by electrochemical deposition technique in the solution containing
Bi3+, HTeO2+ and Se4+. The doped concentration of Se in the
Bi2Te3-ySey compound can be controlled by adjusting electrodepositing solution composition. The surface morphology of the film deposited at potential of -0.04 V is comparatively compact and smooth, and the composition is
Bi2Te2.7Se0.3. The Seebeck coefficient of the films can be increased by anneal treatment and the annealed film deposited at potential of -0.04 V possesses the Seebeck coefficient of -123 μV·K-1. |
| Keywords: Bi2Te3-ySey compound electrodeposition thermoelectric film |
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| 王为,卜路霞.n型Bi2Te3-ySey温差电材料薄膜的电化学制备及表征[J].无机化学学报,2006,22(2):228-232. |
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