| 高透光p型CuSCN薄膜的电沉积制备及机理研究 | |
| Preparation and Mechanism of CuSCN Film by Electrodeposition in Aqueous Solution | |
| 摘要: | |
| 关键词: 硫氰酸亚铜 纳米晶太阳能电池 电化学沉积机理 宽禁带p型半导体 | |
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| Abstract: A stable aqueous electrolyte solution containing Cu(Ⅱ) cations and (SCN) anions was prepared by adding EDTA(ethylenediamine tetraacetic acid disodium salt, C10H14N2O8Na2·2H2O) to chelate with Cu(Ⅱ) cations. CuSCN films were electrodeposited on transparent ITO conducting substrates from as-prepared electrolyte solution. Deposition mechanisms of CuSCN at varied temperatures have been studied. The results indicate that electron quantum tunnel through CuSCN film plays a role and the dense thin film with nanocrystals was obtained at or below room temperature. However, at higher temperature, a thermally activated process was involved and a thick film was obtained. It has been calculated that the activation energy of the growth for crystals is 0.5 eV. XPS pattern shows that the electrodeposited film is (SCN) in stoichiometric excess, indicating a p-type film. As-prepared CuSCN film was with high transmittance (≥85%) in the visible optical range and the direct transition band gap was 3.7 eV. | |
| Keywords: cuprous(Ⅰ) thiocyanate NPC electrodeposition p-type simconductor | |
| 投稿时间：2004-06-21 修订日期：2004-09-06 | |
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| 武卫兵,靳正国,华缜,付亚楠,邱继军.高透光p型CuSCN薄膜的电沉积制备及机理研究[J].无机化学学报,2005,21(3):383-388. | |
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