| 聚喹啉/杂多阴离子杂化LB膜的制备与光电性质 |
| Preparation and Photoelectric Properties of Hybrid Polyquinolin/Heteropolyanion LB Films |
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| 摘要: |
| 关键词: 聚喹啉 三缺位九钨硅杂多阴离子 Langmuir膜与LB膜 光电性质 |
| 基金项目: |
| Abstract: LB film of new hybrid Polyquinolin/Trilacunary heteropolytungstoilicate （PQ/SiW9） was prepared and characterized by π-A isotherm, UV-Vis absorption spectroscopy, atomic force microscope(AFM), fluorescence spectroscopy. The results indicated that they had good film-forming property on the air-water interface. The molecular areas for these monolayers at zero pressure were estimated to be 7.2 nm2·mol-1. The collapse pressure of LB film was 46 mN·m-1. Their I～V curves results showed that the title LB films had good electric conductivity and the conductivity of the LB film increased with monolayers number. |
| Keywords: polyquinolin trilacunary heteropolytungstoilicate Langmuir film and LB film photoelectric properties |
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| 靳素荣,柳士忠,张联盟,杜祖亮,赵卫锋.聚喹啉/杂多阴离子杂化LB膜的制备与光电性质[J].无机化学学报,2004,20(5):621-624. |
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