| Cd2Ge7O16中Tb的长余辉发光特性 |
| Long Afterglow Property of Cd2Ge7O16∶Tb3+ |
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| 摘要: 本文研究了Cd2Ge7O16∶Tb3+材料的发光及其长余辉性质。指出Tb3+的发光是该离子的 5D3- 7DJ、 5D4- 7DJ两种跃迁产生的；随着掺杂浓度的增加 5D4- 7DJ跃迁增强，发光颜色由蓝变绿。并把该材料的长余辉性质归结为基质结构中有电子陷阱和空穴陷阱。提出余辉机理模型。 |
| 关键词: Cd2Ge7O16∶Tb3+ 长余辉 发光机理 |
| 基金项目: |
| Abstract: Luminescence and long afterglow property of Cd2Ge7O16∶Tb3+ are investigated in the paper. It is shown that luminescence of Cd2Ge7O16∶Tb3+ is due to the 5D3- 7DJ, 5D4- 7DJ transitions of Tb3+ ions. With the increasing of Tb3+ concentration, the intensity of the 5D3- 7DJ emission is decreased, while the intensity of the 5D4- 7DJ emission is increased. The color of Cd2Ge7O16∶Tb3+ is becoming green increasely. Long afterglow property of Cd2Ge7O16∶Tb3+ is due to the electron trap and hole trap of Cd2Ge7O16:Tb3+. We create a model of afterglow mechanism. |
| Keywords: Cd2Ge7O16∶Tb3+ long afterglow luminescence mechanism |
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| 摘要点击次数: 1047 |
| 全文下载次数: 1896 |
| 易守军,刘应亮,张静娴,袁定胜,容建华,黄浪欢.Cd2Ge7O16中Tb的长余辉发光特性[J].无机化学学报,2004,20(3):247-250. |
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