| Si5P6O25∶Tb3+的结构与荧光性质 |
| Structure and Luminescence Properties of Si5P6O25∶Tb3+ System |
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| 摘要: |
| 关键词: P-Si体系 发光性质 Tb3+ |
| 基金项目: |
| Abstract: Tb3+ ions were incorporated in P-Si matrix material through a sol-gel process. Luminescence properties of Tb3+ as a function of dopant， firing temperature， composition and structure of matrices were investigated. The gels synthesized by the reaction of P2O5 or H3PO4 with tetraethoxy silane and TbCl3 as dopant were fired in air from the temperature 25～1000℃ to form P-Si crystalline phase. The crystal structure was determined by powder X-ray diffraction. Si5O(PO4)6 were the only crystalline phase and belong to hexagonal crystal system. The emission of 5D4-7F5(～545nm) transition of Tb3+ in the P-Si system is composed of two peaks. The amount of doping Tb3+ varied from 0.664% to 1.644%， and no obvious concentration quenching was observed in this doping concentra-tion range. The intensity of Tb3+ emission increased with firing temperature increasing and becomes stable at 800～1000℃. |
| Keywords: P-Si system luminescence properties Tb3+ ion |
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| 王喜贵,吴红英,杨展澜,翁诗甫,吴瑾光.Si5P6O25∶Tb3+的结构与荧光性质[J].无机化学学报,2003,19(2):219-224. |
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