| 低温合成纳米α-Si3N4材料及结构表征 |
| LOW-TEMPERATURE SYNTHESISAND STRUCTURAL CHARACTE-RIZATION OF NANOMETER α-Si3N4 MATERIALS |
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| 摘要: 本文报道在机械驱动力下,通过机械合金化途径使氮或氨直接在室温下在逐步细化的、新鲜的、高反应活性的硅界面上充分扩散,形成亚稳态系统,在800℃真空炉处理后得到纳米α-Si3N4粉末。发现气氛对合成Si3N4纳米粉末有很大影响。在氮气中,高能球磨前硅粉表面形成的氧化膜在高能球磨过程中与氮反应生成Si2N2O保护层,阻止氮的进一步扩散,使反应产物含有大量未反应的游离硅。在氨气中可以避免生成Si2N2O,反应产物几乎全部转化为α-Si3N4。 |
| 关键词: Si3N4 纳米材料 合成 |
| 基金项目: 湖南师范大学科研基金;国家自然科学基金资助项目 |
| Abstract: Under mechanical power nitrogen or ammonia was fully diffused on progressively fine, fresh,highly active interfaceofsilicon by use ofthe mechanical alloy method,forming a substable system. The nanometer α-Si3N4 was obtained after heattreated in vacuum furnace at 800℃. It was found that the atmosphere effects on the synthesis of nanometer Si3 N4 powder greatly.In nitrogen gas,the protective layerof Si2N2O was produced through the reaction of nitrogen with oxidic film formed on the face of silicon powder before mill,which prevented nitrogen from progressively diffusing,resulting in a lot of non-reaction free silicon in product.In ammonia gas,the formation of Si2N2O was avoided.The product was nearly completelyαSi3N4. |
| Keywords: Si3N4 nano-meter material synthesis |
| 投稿时间：1994-11-15 |
| 摘要点击次数: 1314 |
| 全文下载次数: 1801 |
| 杜伟坊,杜海清.低温合成纳米α-Si3N4材料及结构表征[J].无机化学学报,1996,12(1):7-11. |
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