等离子体化学气相淀积法生长Y2O3薄膜
PLASMA CVD GROWTH OF Y2O3, THIN FILM
作者单位
彭定坤 中国科学技术大学应用化学系, 合肥 
于晖 中国科学技术大学应用化学系, 合肥 
孟广耀 中国科学技术大学应用化学系, 合肥 
沈瑜生 中国科学技术大学应用化学系, 合肥 
摘要: 采用等离子体激活的化学气相淀积装置系统,以钇的β-二酮类螯合物(Y(DPM)3)为源物质,于低温低压等离子体条件下,在单晶硅、兰宝石和石英玻璃衬底上生长了Y2O3薄膜.对生长层进行形貌观察、表面组成分析、X-射线衍射结构分析和光学性能测试.结果表明,淀积层形貌和结构与衬底性质有关.Y2O3生长层与单晶硅和兰宝石衬底存在确定的外延关系,在无定形石英玻璃衬底上的生长层则是附着良好的非晶态膜.
关键词: 薄膜  化学气相淀积  氧化钇
基金项目: 中国科学院科学基金资助课题
Abstract: Y2O3 thin films were deposited on different substrates, such as single crystal silicon, sapphire and quartz glass by plasma CVD technique at low pressure and low temperature using β-diketone chelate of yttrium as source material. A set of optimized deposition conditions was presented together with surface morphology, composition, structural and optical properties of the films, Depending on the substrate materials, the deposited layer could be amorphous, polycrystalline or single crystal film. The crystallographic orientation of(222)on Si(Ⅲ)and(422)on a- Al2O5(1102)was found. Deposited film on quartz glass was amorphous. Transparent films well adhered to the substrate were obtained with deposited rates of about 1300Å/min. Ultraviolet visible absorption spectra for the films on sapphire and quartz glass exhibited strong absorbance in the range 190-400 nm and absorbance without specific bands throughout the visible spectrum.
Keywords: thin film  chemical vapor deposition(CVD)  yttrium oxide
投稿时间:1986-11-29 
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彭定坤,于晖,孟广耀,沈瑜生.等离子体化学气相淀积法生长Y2O3薄膜[J].无机化学学报,1987,3(4):87-92.
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